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Publications
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Zhang, X., Zou, X., Tang, C. and Lau, K. (2017). Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si. physica status solidi (a), 214(8), p.1600817. doi:10.1002/pssa.201600817 |
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Zhang, X., Zou, X., Lu, X., Tang, C. and Lau, K. (2017). Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison. IEEE Transactions on Electron Devices, 64(3), pp.809-815. doi:10.1109/TED.2017.2647990 |
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Yip, P., Zou, X., Cho, W., Wu, K. and Lau, K. (2017). Transistors and Tunnel Diodes Enabled by Large-scale MoS2 Nanosheets Grown on GaN. Semiconductor Science and Technology, 32(7), p.075011. |
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Zou, X., Zhang, X., Lu, X., Tang, C. and Lau, K. (2016). Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates. IEEE Electron Device Letters, 37(9), pp.1158-1161. doi: 10.1109/led.2016.2594821 |
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Zou X., Cai Y., Chong W. and Lau K. (2016). Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique. Journal of Display Technology, 12(4), 397-401. |
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Zou X., Zhang X., Chong W., Tang C. and Lau K. (2016). Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding. IEEE Transactions on Electron Devices, 63(4), 1587-1593. doi10.1109/TED.2016.2526685. doi:10.1109/LED.2016.2548488. |
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Cai Y., Zou X., Chong W. and Lau K. (2016). Optimization of Electrode Structure for Flip-chip HVLED via Two-level Metallization. Physica Status Solidi (A). doi:10.1002/pssa.201532803. |
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Zou X., Zhang X., Lu X., Tang C. and Lau K. (2016). Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers. IEEE Electron Device Letters, PP(99). doi:10.1109/LED.2016.2548488. |
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Shi, B., Li, Q., Wan, Y., Ng, K., Zou, X., Member IEEE, Tang, C., & Lau, K., Fellow, IEEE (2015). InA1GaAs/InA1As MQWs on Si Substrate. IEEE Photonics Technology Letters, 1041-1135(c). doi:10.1109/LPT.2015.2391099 |
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Zou, X., Lu, X., Lucas, R., Kuech, T., Choi, J., Gopalan, P., & Lau, K. (2014). Growth and characterization of horizontal GaN wires on silicon. Applied Physics Letters, 104(232101), 1-5. doi:10.1063/1.4886126 |
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