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IAS Senior Fellow
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| Prof Kei May LAU |
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Chair Professor of Electronic and Computer Engineering, HKUST
Chair Professor in Microelectronics Thrust, Function Hub, HKUST (Guangzhou) |
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Prof. Kei May Lau received the Ph.D. Degree in Electrical Engineering from Rice University, Houston, Texas, in 1981. From 1980 to 1982, she was a Senior Engineer at M/A-COM Gallium Arsenide Products, Inc., where she worked on epitaxial growth of GaAs for microwave devices, development of high-efficiency and mm-wave IMPATT diodes, and multi-wafer epitaxy by the chloride transport process. In the fall of 1982, she joined the faculty of the Electrical and Computer Engineering Department at the University of Massachusetts/Amherst, where she became a full Professor in 1993. She initiated metalorganic chemical vapor deposition (MOCVD), compound semiconductor materials and devices programs at UMass. Her research group performed studies on heterostructures, quantum wells, strained-layers, III-V selective epitaxy, as well as high-frequency and photonic devices. Prof. Lau spent her first sabbatical leave in 1989 at the MIT Lincoln Laboratory. She developed acoustic sensors at the DuPont Central Research and Development Laboratory in Wilmington, Delaware during her second sabbatical leave ('95-'96). In the fall of 1998, she was a Visiting Professor at the Hong Kong University of Science and Technology (HKUST), where she joined the regular faculty since the summer of 2000. She established the Photonics Technology Center for R&D efforts in wide-gap semiconductor materials and devices. She became a Chair Professor of Electronic and Computer Engineering at HKUST in July 2005 and she was named Fang Professor of Engineering from 2016 to 2020.
Prof. Lau is an IEEE Fellow, a Fellow of Optical Society of America (OSA), and a recipient of the National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers. She served on the IEEE Electron Devices Society Administrative Committee and was an editor of the IEEE Transactions on Electron Devices (1996-2002). She also served on the Electronic Materials Committee of the Minerals, Metals and Materials Society (TMS) of AIME (American Institute of Materials Engineers). |
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| + News / Interviews with IAS byline (Total: 6 records) |
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| + Research publications with IAS byline (Total: 13 records) |
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Publications
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View / Download
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Lai, B., Li, Q. and Lau, K. M. (2018). Heterointerface Study of InAs/GaSb Nanoridge Heterostructures Grown by Metal Organic Chemical Vapor Deposition on V-grooved Si (0 0 1) Substrates. Journal of Crystal Growth, 484, pp.12-16. doi:10.1016/j.jcrysgro.2017.12.028. |
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Hu, Y., Jiang, H., Lau, K. M. and Li, Q. (2018). Chemical vapor Deposited Monolayer MoS2 Top-gate MOSFET with Atomic-layer-deposited ZrO2 as Gate Dielectric. Semiconductor Science and Technology, 33(4), p.045004. doi: 10.1088/1361-6641/aaaa5f |
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Li, Q. and Lau, K. M. (2017). Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Progress in Crystal Growth and Characterization of Materials, 63(4), pp.105-120. doi: 10.1016/j.pcrysgrow.2017.10.001. |
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Yip, P., Zou, X., Cho, W., Wu, K. and Lau, K. (2017). Transistors and Tunnel Diodes Enabled by Large-scale MoS2 Nanosheets Grown on GaN. Semiconductor Science and Technology, 32(7), p.075011. |
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Zhang, X., Zou, X., Lu, X., Tang, C. and Lau, K. (2017). Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison. IEEE Transactions on Electron Devices, 64(3), pp.809-815. doi:10.1109/TED.2017.2647990 |
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Zhang, X., Zou, X., Tang, C. and Lau, K. (2017). Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si. physica status solidi (a), 214(8), p.1600817. doi:10.1002/pssa.201600817 |
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Zou X., Cai Y., Chong W. and Lau K. (2016). Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique. Journal of Display Technology, 12(4), 397-401. |
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Zou, X., Zhang, X., Lu, X., Tang, C. and Lau, K. (2016). Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates. IEEE Electron Device Letters, 37(9), pp.1158-1161. doi: 10.1109/led.2016.2594821 |
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Zou X., Zhang X., Chong W., Tang C. and Lau K. (2016). Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding. IEEE Transactions on Electron Devices, 63(4), 1587-1593. doi10.1109/TED.2016.2526685. doi:10.1109/LED.2016.2548488. |
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Cai Y., Zou X., Chong W. and Lau K. (2016). Optimization of Electrode Structure for Flip-chip HVLED via Two-level Metallization. Physica Status Solidi (A). doi:10.1002/pssa.201532803. |
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Zou X., Zhang X., Lu X., Tang C. and Lau K. (2016). Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers. IEEE Electron Device Letters, PP(99). doi:10.1109/LED.2016.2548488. |
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Shi, B., Li, Q., Wan, Y., Ng, K., Zou, X., Member IEEE, Tang, C., & Lau, K., Fellow, IEEE (2015). InA1GaAs/InA1As MQWs on Si Substrate. IEEE Photonics Technology Letters, 1041-1135(c). doi:10.1109/LPT.2015.2391099 |
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Zou, X., Lu, X., Lucas, R., Kuech, T., Choi, J., Gopalan, P., & Lau, K. (2014). Growth and characterization of horizontal GaN wires on silicon. Applied Physics Letters, 104(232101), 1-5. doi:10.1063/1.4886126 |
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| + Engagement in IAS activities / events (Total: 3 records) |
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