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Subtleties of Structure in the Gain Medium:
Low Threshold InGaN Lasers with Quantum Dots, Quantum Wells and in between
Prof Evelyn Hu, Tarr-Coyne Professor of Applied Physics and Electrical Engineering, Harvard University; Visiting Professor of HKUST Jockey Club Institute for Advanced Study
日期 : 2014年 6月 13日 (星期五)
時間 : 下午3時至4時30分
地點 : 香港科技大學 李兆基校園 盧家驄薈萃樓 高研院演講廳
錄像及圖片集 詳情

The ability to fabricate laser cavities with dimensions in the range of 100’s of nanometers provides enormously greater sensitivity in understanding the real limitations to ultra-low threshold lasing. IAS Visiting Professor Prof Evelyn Hu presents her work to understand the reasons for these limitations through a comparative study of lasing thresholds in microdisk cavities with varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots.

The lecture is free and open to all. Seating is on a first-come, first-served basis.
Light refreshments will be served from 4:30 to 5:00 pm.

HKUST Jockey Club Institute for Advanced Study
Enquiries ias@ust.hk / 2358 5912
http://ias.ust.hk