Abstract
Raman spectroscopy is widely used in graphene and nano-carbon community though the analysis of Raman spectroscopy is somewhat too specific for non-specialists. Here starting from a general introduction of graphene, nano-carbon science and Raman spectroscopy, the speaker will overview his recent works on Raman spectroscopy of graphene.
Gate modulated Raman spectroscopy is a method of making Raman measurements while changing the Fermi energy by applying a gate voltage to the sample. By suppressing some optical processes for Raman spectra by changing the Fermi energy, people can know a lot of new information on the interplay between photon and phonon and this technique can be used directly to (1) the phonon mode assignment for combination phonon modes of single layer graphene especially for intermediate phonon frequencies, (2) controlling so-called electronic Rama spectra and its quantum interference effects and (3) the information of the interlayer interactions between two layers of the bilayer graphene.
Another topic is Raman spectroscopy of twisted bilayer graphene. Starting from the definition of the structure of twisted bilayer graphene, the speaker will discuss the resonance condition for Raman spectroscopy for each twisted bilayer graphene. He will also compare the calculated Raman spectroscopy with the experiments.
About the speaker
Prof Riichiro Saito received his PhD in Physics from the University of Tokyo in 1985. He was Research Associate at the University of Tokyo from 1985 to 1990 and an Associate Professor at the University of Electro-Communications from 1990 to 2003. He joined Tohoku University in 2003, and is currently Professor of Physics.
Prof Saito wrote 33 books including Physical Properties of Carbon Nanotubes and Raman Spectroscopy in Graphene Related Systems, with a total citation of paper 19,783 and h-index 65. He received numerous awards including the International Union of Material Research Society Somiya Award, the Japanese Society of Microscopy Award, the Japan Carbon Award for Innovative Research, Hsun Lee Research Award from the Institute of Metal Research, and Japan IBM Science Prize (Physics).
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