Abstract
The indium gallium zinc oxide (IGZO) thin-film transistors (TFTs), reported in 2003 and 2004, are now applied to drive high definition LCD panels and large-sized OLED-TVs. Amorphous IGZO is a member of transparent amorphous oxide semiconductors (TAOS) with high electron mobility, and was designed based on a simple material design concept. In this lecture, the speaker will review the research on transparent oxide semiconductors for flat-panel displays along with recent progress in new semiconductors for OLED applications. Emphases will be placed on materials design concepts.
About the speaker
Prof Hideo Hosono received his PhD in Engineering from the Tokyo Metropolitan University in 1982. In 1990, he joined the Nagoya Institute of Technology as an Associate Professor and moved to the Okazaki National Research Institutes in 1995. In 1997, he joined the Tokyo Institute of Technology and is currently a Professor at the Laboratory for Materials and Structures.
Prof Hosono’s research focuses on oxide semiconductor, nanostructured oxide crystal, catalysis, structure analysis by pulsed EPR and devices, including the thin film transistor, light-emitting diode and electron emitter.
Prof Hosono received numerous awards including the Japan Prize (Materials and Production) (2016), the Imperial Prize by the Japan Academy (2015), the Nishina Memorial Prize (2012), and the Bernd T Matthias Prize (2009). He was also elected the Foreign Member of the Royal Society (2017) and the Fellow of the Society for Information Display (2016).
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